| PART |
Description |
Maker |
| 947C361K801CAMS 947C601K801CCMS 947C471K102CDMS 94 |
Type 947C High Capacitance, High Current, DC Link Capacitors
|
Cornell Dubilier Electronics
|
| EC2-6 EC2 EC2-12ND EC2-12NP EC2-12NU EC2-12NJ EC2- |
High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type
COMPACT AND LIGHTWEIGHT/ SMALL MOUNTING SIZE/ HIGH BREAKDOWN VOLTAGE
High Insulation/ High breakdown voltage/ compact and lightweight/ Surface mounting type
A/D Converter (A-D) IC; Resolution (Bits):24; Sample Rate:192kSPS; Input Channels Per ADC:8; Input Channel Type:Differential; Data Interface:Serial; Package/Case:48-LQFP RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Capacitor Type:Suppression; Voltage Rating:100VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.022uF; Capacitance Tolerance: 10%; Lead Pitch:5.00mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
COMPACT AND LIGHTWEIGHT, SMALL MOUNTING SIZE, HIGH BREAKDOWN VOLTAGE 小巧轻盈，小安装尺寸，高击穿电压
|
NEC Corp.
NEC, Corp.
|
| NNCD68RG NNCD6.8RG NNCD6.8RG-T2 NNCD6.8RG-T1 |
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD
ESD noise clipping diode 5pin SC-74A low capacitance
|
NEC Corp.
NEC[NEC]
|
| BB641 Q62702-B792 SIEMENSAG-Q62702-B792 |
Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance)
From old datasheet system
|
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| STV160NF03L |
Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:2.5VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:330uF; Capacitance
N - CHANNEL 30V - 0.0019ohm - 160A PowerSO-10 STripFET MOSFET
|
意法半导
STMicroelectronics
|
| BB664 Q62702-B0909 Q62702-B0908 |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance) 硅变容二极管（甚高频电视信号接收器高电容率低串联电感低串联电阻）
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MAZ8180 MAZ8110 MAZ8024 MAZ8300-H MAZ8300-L MAZ830 |
; Capacitance:33pF; Capacitance Tolerance: /- 1 %; Working Voltage, DC:150V; Package/Case:0605; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount
; Capacitance:3.3pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:150V; Package/Case:0605; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount
CAP POLYPROPYLENE .0013UF 50V 1%
Silicon planar type 27 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
.00015 UFD POLYPROPYLENE CAP 4.9 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Silicon planar type 33 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CAP POLYPROPYLENE .0012UF 50V 2%
|
PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
Electronic Theatre Controls, Inc.
Panasonic, Corp.
|
| STD30NF03L |
Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:100uF; Capacitance
N - CHANNEL 30V - 0.020 ohm - 30A DPAK STripFET POWER MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| SA56614-44GW SA56614-20GW SA56614-20 SA56614-29 SA |
Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:25V; Dielectric Characteristic:X7R; Package/Case:0603; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
Ceramic Multilayer Capacitor; Capacitance:1200pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
CMOS system reset
|
PHILIPS[Philips Semiconductors]
|
| 2MBI150NE-120 |
Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:15uF; Capacitance Tolerance: /- 20%; ESR:600mohm; Leaded Process Compatible:Yes RoHS Compliant: Yes
IGBT MODULE ( N series )
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
